WANG, Yibing. Measurement Of Silicon Carbide Epitaxial Layer Thickness Based on Infrared Interferometry and Fourier Transform Analysis. Highlights in Science, Engineering and Technology, [S. l.], v. 161, p. 234–239, 2026. DOI: 10.54097/wbhbvb71. Disponível em: https://datahset.org/index.php/ojs/article/view/37. Acesso em: 16 apr. 2026.